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Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures (Graduate Texts in Physics)

SKU: 9783030438685

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Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures (Graduate Texts in Physics), Jacob J. Lamb, 9783030438685

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1 Introduction 1.1 Epitaxy 1.2 Issues of Epitaxy 2 Structural Properties of Heterostructures 2.1 Basic Crystal Structures 2.2 Elastic Properties of Heterostructures 2.3 Dislocations 2.4 Defects in Organic Crystals 2.5 Structural Characterization using X-ray Diffraction 3 Electronic Properties of Heterostructures 3.1 Bulk Properties 3.2 Band Offsets 3.3 Electronic States in Low-Dimensional Structures 4 Thermodynamics of Epitaxial Layer-Growth 4.1 Phase Equilibria 4.2 Crystalline Growth 5 Atomistic Aspects of Epitaxial Layer-Growth 5.1 Surface Structure 5.2 Kinetic Process Steps in Layer Growth 5.3 Self-Organized Nanostructures 6 In situ Growth Monitoring 6.1 Surface Probes 6.2 Electron Diffraction Techniques 6.3 Optical Techniques 7 Application of Surfactants 7.1 Surfactant Effect 7.2 Surfactant-Assisted Epitaxy 8 Doping, Diffusion, and Contacts 8.1 Doping of Semiconductors 8.2 Diffusion 8.3 Metal-Semiconductor Contact 9 Methods of Epitaxy 9.1 Liquid Phase Epitaxy 9.2 Metallorganic Vapor Phase Epitaxy 9.3 Molecular Beam Epitaxy 10 Special Growth Techniques 10.1 Growth of Buffer Layers 10.2 Atomic Layer Epitaxy and Related Techniques 10.3 Selective-Area Epitaxy 10.4 Vapor-Liquid-Solid Growth

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